VX-2 Series Power MOSFET
●Electrical
Characteristics Tc = 25℃
Item
Symbol
V
(BR)DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate-Source Leakage Current
Forward Tran�½�conductance
g
fs
Static Drain-Source On-�½�tate Resistance
R
DS(ON)
Gate Threshold Voltage
V
TH
V
SD
Source-Drain Diode Forwade Voltage
θjc
The�½�mal Resistance
Q
g
Total Gate Charge
C
iss
Input Capacitance
Reverse Transfer Capacitance
C
rss
Output Capacitance
C
oss
Turn-On Time
t
on
t
off
Turn-Off Time
Conditions
2SK2196( F20W50VX2 )
Min.
500
Typ.
Max.
250
±0.1
6
2.5
15
0.27
3.0
Unit
V
μA
S
Ω
V
I
D
=
1mA,
V
GS
= 0V
V
DS
= 500V, V
GS
= 0V
V
GS
=
±30V,
V
DS
= 0V
I
D
=
10A,
V
DS
=
10V
I
D
=
10A,
V
GS
=
10V
I
D
=
1mA,
V
DS
=
10V
I
S
=
10A,
V
GS
= 0V
junction to case
V
DD
= 400V, V
GS
=
10V,
I
D
= 20A
V
DS
=
10V,
V
GS
= 0V, f =
1MH
Z
I
D
=
10A,
V
GS
=
10V,
R
L
=
15Ω
85
2400
170
500
135
340
0.35
3.5
1.5
1.0 ℃/Ｗ
nC
pF
225
565
ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
