2M
×
8 - Bit Dynamic RAM
2k Refresh
(Fast Page Mode)
Advanced Information
• 2 097 152 words by 8-bit organization
• 0 to 70
°C
operating temperature
• Fast Page Mode operation
• Performance:
-50
-60
60
15
30
104
40
ns
ns
ns
ns
ns
HYB 5117800/BSJ-50/-60
HYB 3117800BSJ-50/-60
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
84
35
• Power dissipation:
HYB5117800
-50
Power Supply
Active
TTL Standby
CMOS Standby
440
-60
5
±
10%
385
11
5.5
HYB3117800
-50
288
-60
3.3
±
0.3 V
252
7.2
3.6
mW
mW
mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and test mode
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• 2048 refresh cycles / 32 ms (2k-refresh)
• Plastic Package:
P-SOJ-28-3 400 mil
Semiconductor Group
1
1998-10-01
SIEMENS [ Siemens Semiconductor Group ]
