SE2525L
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
Preliminary Information
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings for a long period of time may
cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the
recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this
device should be at ESD protected workstations.
Symbol
V
CC
V
B
V
EN
IN
T
STG
T
j
Definition
Supply Voltage on pins V
CC0
, V
CC1
V
CC2
and V
CC3
Bias Control Voltage
Power Amplifier Enable
RF Input Power
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
-
-40
-
Max.
4.0
4.0
4.0
4.0
+150
+150
Unit
V
V
V
dBm
°C
°C
Recommended Operating Conditions
Symbol
V
CC
T
A
Parameter
Supply Voltage on pins V
CC0
, V
CC1
V
CC2
and V
CC3
Ambient Temperature
Min.
2.7
-40
Max.
3.6
85
Unit
V
°C
DC Electrical Characteristics
Conditions:
Symbol
I
CC-802.11b
I
CC-802.11g
I
CC-1DB
I
OFF
V
REG
I
REG
V
ENH
V
ENL
V
B
I
B
V
CC
= V
EN
= 3.3 V, V
B
connected to V
REG
, T
A
= 25 °C, as measured on SiGe Semiconductor’s SE2525L-
EV1 evaluation board, unless otherwise noted.
Parameter
Supply Current
Supply Current
Supply Current
Supply Current
Regulator Voltage
Regulator current
Logic High Voltage
Logic Low Voltage
Bias voltage
Bias current
V
B
= 2.75 V
Conditions
P
OUT
= 23 dBm, 11 Mbps CCK
signal, BT = 0.45
P
OUT
= 19 dBm, 54 Mbps OFDM
signal, 64 QAM
P
OUT
= P
1dB
, No modulation
V
EN
= 0 V
I
REG
= 120 µA
(1)
-
T
A
= -40 to 85 °C, V
CC
= 2.7 to 3.6 V
T
A
= -40 to 85 °C, V
CC
= 2.7 to 3.6 V
-
Min.
-
-
-
-
-
-
1.3
0
0
-
Typ.
230
160
340
10
2.5
-
-
-
-
-
Max.
-
-
-
-
2.75
500
V
CC
0.5
V
REG
120
Unit
mA
mA
mA
µA
V
µA
V
V
V
µA
(1) No coupling or circuitry that provides a DC path to ground should be connected to the V
REG
pin. Connection to
the V
B
is allowed.
28-DST-01
Rev 2.1
Apr-25-2006
Confidential
QA042506
3 of 12
SIGE [ SIGE SEMICONDUCTOR, INC. ]
