HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
46. S-80753AN (Detection voltage : 5.172 to 5.428 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
5.300
5.428
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.0
3.0
2
15.0
V
1
0.50
mA
3
3.70
7.00
0.75
±0.66
mV/°C
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
5.172
-V
DET
×0.02
1.0
0.23
1.60
3.18
0.46
V
DD
= 6.0 V
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
Pch
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
V
DD
= 2.4 V
V
DD
= 3.6 V
(CMOS V
DD
= 6.0 V
4
47. S-80755AL-EK-X (Detection voltage : 5.368 to 5.632 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
5.500
5.632
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.0
3.0
2
15.0
V
1
0.50
mA
3
3.70
7.00
0.75
±0.69
mV/°C
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
5.368
-V
DET
×0.02
1.0
0.23
1.60
3.18
0.46
V
DD
= 6.0 V
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
Pch
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
V
DD
= 2.4 V
V
DD
= 3.6 V
(CMOS V
DD
= 6.0 V
4
48. S-80761SL-ER-X (Detection voltage : 5.953 to 6.247 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
6.100
6.247
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.9
3.6
2
15.0
V
1
0.50
mA
3
3.70
7.00
8.56
0.96
±0.78
mV/°C
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
5.953
-V
DET
×0.02
1.0
0.23
1.60
3.18
4.13
0.59
V
DD
= 7.5 V
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
Pch
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
V
DD
= 2.4 V
V
DD
= 3.6 V
V
DD
= 4.8 V
(CMOS V
DD
= 8.4 V
4
22
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
