ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
Rev.3.3
_00
S-809xxC Series
2. CMOS Output Products
Table 8
Item
Detection voltage
*1
Hysteresis width
Symbol
−V
DET
V
HYS
Condition
—
S-80913 to 14
S-80915 to 60
Current consumption
I
SS
V
DD
=2.0
V
V
DD
=3.5
V
V
DD
=4.5
V
V
DD
=6.0
V
V
DD
=7.5
V
S-80913 to 14
S-80915 to 26
S-80927 to 39
S-80940 to 54
S-80955 to 60
(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
−V
DET(S)
−V
DET(S)
−V
DET(S)
V
1
×0.98
×1.02
−V
DET
−V
DET
−V
DET
×0.03
×0.05
×0.08
−V
DET
−V
DET
−V
DET
×0.03
×0.05
×0.07
1.0
—
2.5
2
μA
1.1
—
2.8
1.2
—
3.0
1.3
—
3.3
1.4
—
3.5
0.7
—
10.0
V
1
0.23
0.59
2.88
1.43
1.68
2.08
2.7
18
0.64
1.36
4.98
2.39
2.78
3.42
3.6
24
—
—
—
—
—
—
4.5
30
ms
4
5
mA
3
Operating voltage
Output current
V
DD
I
OUT
Delay time
t
D
—
Output transistor, V
DD
=0.95
V
Nch, V
DS
=0.5
V S-80913 to 14
V
DD
=1.2
V
S-80915 to 60
V
DD
=2.4
V
S-80927 to 60
Output transistor, V
DD
=4.8
V
Pch, V
DS
=0.5
V S-80913 to 39
V
DD
=6.0
V
S-80940 to 54
V
DD
=8.4
V
S-80955 to 60
V
DD
=2.0
V
C
D
=4.7
nF
S-80913 to 14
V
DD
=3.5
V
S-80915 to 26
V
DD
=4.5
V
S-80927 to 39
V
DD
=6.0
V
S-80940 to 54
V
DD
=7.5
V
S-80955 to 60
Δ −
V
DET
ppm/
Detection voltage
—
1
±100
±350
Ta=−40°C to
+85°C
*2
°C
temperature coefficient
Δ
Ta
• −
V
DET
*1.
−V
DET
:
Actual detection voltage,
−V
DET(S)
:
Specified detection voltage (The center value of detection voltage range in
Table 2.)
*2.
The temperature change ratio in the detection voltage
[mV/°C]
is calculated by using the following equation.
Δ −
V
DET
[
mV/
°
C
]
*1
= −
V
DET
(
Typ.
)
[
V
]
*2
× Δ −
V
DET
[
ppm/
°
C
]
*3
÷
1000
Δ
Ta
Δ
Ta
•
−
V
DET
*1.
Temperature change ratio of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
Seiko Instruments Inc.
9
SII [ SEIKO INSTRUMENTS INC ]
