C8051F80x-83x
7. Electrical Characteristics
7.1. Absolute Maximum Specifications
Table 7.1. Absolute Maximum Ratings
Parameter
Conditions
Min
Typ
Max
Units
Ambient temperature under bias
Storage Temperature
–55
–65
–0.3
—
—
—
125
150
5.8
°C
°C
V
Voltage on RST or any Port I/O Pin
with respect to GND
Voltage on V with respect to GND
–0.3
—
—
—
4.2
V
DD
Maximum Total current through V
and GND
500
mA
DD
Maximum output current sunk by RST
or any Port pin
—
—
100
mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Rev. 1.0
39
SILICON [ SILICON ]
