Si1010/1/2/3/4/5
Table 4.24. Absolute Maximum Ratings
Parameter
Value
Unit
V
V
to GND
–0.3, +3.6
–0.3, +8.0
–0.3, +6.5
DD
Instantaneous V
to GND on TX Output Pin
V
RF-peak
Sustained V
to GND on TX Output Pin
V
RF-peak
Voltage on Digital Control Inputs
Voltage on Analog Inputs
–0.3, V + 0.3
V
DD
–0.3, V + 0.3
V
DD
RX Input Power
+10
–40 to +85
30
dBm
C
C/W
C
C
Operating Ambient Temperature Range T
A
Thermal Impedance
JA
Junction Temperature T
+125
J
Storage Temperature Range T
–55 to +125
STG
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only and functional operation of the device at or beyond these ratings in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Power Amplifier may be damaged if switched on without proper
load or termination connected. TX matching network design will influence TX VRF-peak on TX output pin.
Caution: ESD sensitive device.
Rev. 1.0
75
SILICON [ SILICON ]
