Si3230
Table 7. Si3230 DC Characteristics, V
DDA
= V
DDD
= 3.3 V
(V
DDA
,V
DDD
= 3.13 V to 3.47 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
Min
0.7 x V
DDD
—
Typ
—
—
—
—
—
Max
—
0.3 x V
DD
D
Unit
V
V
V
V
V
DIO1,DIO2,SDITHRU:I
O
= –2 mA
V
DDD
– 0.6
SDO:I
O
= –4 mA
DOUT: I
O
= –40 mA
—
—
0.4
V
DDD
– 0.8
—
Low Level Output Voltage
V
OL
DIO1,DIO2,DOUT,SDITHRU:
I
O
= 2 mA
SDO,INT:I
O
= 4 mA
Input Leakage Current
I
L
–10
—
10
µA
Table 8. Power Supply Characteristics
(V
DDA
,V
DDD
= 3.13 V to 5.25 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Power Supply Current,
Analog and Digital
Symbol
I
A
+ I
D
Test Condition
Sleep (RESET = 0)
Open
Active on-hook
ETBO = 4 mA, codec and Gm
amplifier powered down
Active OHT
ETBO = 4 mA
Active off-hook
ETBA = 4 mA, I
LIM
= 20 mA
Ground-start
Ringing
Sinewave, REN = 1, V
PK
= 56 V
Typ
1
0.1
33
37
Typ
2
0.13
42.8
53
Max
0.2
49
68
Unit
mA
mA
mA
57
73
36
45
—
—
—
—
—
72
88
47
55
100
100
110
1
1
83
99
55
65
—
—
—
—
—
mA
mA
mA
mA
µA
µA
µA
mA
mA
V
DD
Supply Current (Si3201)
I
VDD
Sleep mode, RESET = 0
Open (high impedance)
Active on-hook standby
Forward/reverse active off-hook, no
I
LOOP
, ETBO = 4 mA, V
BAT
= –24 V
Forward/reverse OHT, ETBO = 4 mA,
V
BAT
= –70 V
Preliminary Rev. 0.96
9
SILABS [ SILICON LABORATORIES ]
