Si8410/20/21
Table 2. Electrical Characteristics (Continued)
(VDD1 = 3.3 V, VDD2 = 3.3 V, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
For All Models
Min
Typ
Max
Unit
Output Rise Time
t
C = 15 pF
—
—
25
2
2
—
—
—
ns
ns
r
L
Output Fall Time
t
C = 15 pF
L
f
Common Mode Transient
Immunity
CTMI
V = V or 0 V
30
kV/µs
I
DD
2
Start-up Time
t
—
3
—
µs
SU
Notes:
1. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
2. Start-up time is the time period from the application of power to valid data at the output.
Preliminary Rev. 0.1
9
SILICON [ SILICON ]
