Si8430/31/35
Table 11. Thermal Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
IC Junction-to-Case Thermal Resistance
θ
Thermocouple located
at center of package
—
45
—
ºC/W
JC
IC Junction-to-Air Thermal Resistance
Device Power Dissipation*
θ
—
—
107
—
—
ºC/W
mW
JA
P
250
D
*Note: The Si8430-C-IS is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle
square wave.
200
175
162
150
2.75 V
125
100
75
5.5 V
3.6 V
50
25
0
0
50
100
150
200
Figure 3. Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
16
Rev. 0.3
SILICON [ SILICON ]
