2KG026075YQ
2KG026075YQ SWITCHING DIODE CHIPS
DESCRIPTION
Ø
2KG026075YQ is a high speed switching diode chip
fabricated in planar technology.
Ø
Ø
This chip can be encapsulated as 1N4148 switching diode.
When the chip is selected glass package, the chip thickness
is 100µm, and the top electrodes material is Ag bump, the
back-side electrodes material is Ag.
Ø
Chip size: 0.26 X 0.26 (mm)
2
.
2KG026XXX CHIP TOPOGRAPHY
2KG026075YQ ELECTRICAL CHARACTERISTICS
(T
J
=25°C)
Characteristics
Forward Voltage
Reverse Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
V
F
V
BR
I
R
C
d
t
rr
I
F
=10mA.
I
F
=100mA.
I
B
=100µA.
V
R
=20V.
V
R
=75V.
f=1MHz; V
R
=0.
When switched from I
F
=10mA to
V
R
=6V; R
L
=100Ω; measured at
I
R
=1mA.
--
--
4
ns
Test Conditions
Min.
--
0.62
100
--
--
--
Typ.
--
0.9
120
--
--
1.9
Max.
1.0
1.2
--
25
5
4
Unit
V
V
V
nA
µA
pF
2KG026075YQ APPEARANCE
Top side material is Ag ball
Chip Appearance Diagram
Parameter
Chip Size
Chip Thickness
Bump Diameter
Bump Height
Scribe Line Width
Symbol
D
C
A
B
/
Min.
220
85
135
20
--
Type
--
--
--
--
40
Max.
240
120
160
40
--
Unit
µm
µm
µm
µm
µm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2006.04.25
Page 1 of 1
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