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2KG034350JL 参数 Datasheet PDF下载

2KG034350JL图片预览
型号: 2KG034350JL
PDF下载: 下载PDF文件 查看货源
内容描述: 开关二极管CHIPS [SWITCHING DIODE CHIPS]
分类和应用: 二极管开关
文件页数/大小: 1 页 / 51 K
品牌: SILAN [ SILAN MICROELECTRONICS JOINT-STOCK ]
   
2KG034350JL
2KG034350JL SWITCHING DIODE CHIPS
DESCRIPTION
Ø
2KG034350JL is a high speed switching diode chip fabricated
in planar technology.
Ø
High reverse breakdown voltage rating.
Ø
This chip can be encapsulated as MBD3004 switching diode.
Ø
This chip has several thicknesses, can suit for different plastic
package. The top electrodes material is Al, and the back-side
electrodes material is Au.
Ø
Chip size: 0.34 X 0.34 (mm );
Ø
Chip Thickness: 155±20µm or 180±20µm;
2
2KG034350JL CHIP TOPOGRAPHY
La: Chip Size: 340µm;
Lb: Pad Size: 180µm;
MAXIMUM RATINGS
(Ta=25°C)
Characteristics
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current@1.0µs
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
R
I
F
I
FSM
T
J
T
STG
Value
350
300
225
4.0
150
-65~+150
Unit
V
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
Characteristics
Symbol
Test Conditions
I
F
=20mA.
Forward Voltage
V
F
I
F
=100mA.
I
F
=200mA.
Reverse Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
V
BR
I
R
C
T
T
rr+
I
B
=100µA.
V
R
=240V.
f=1MHz; V
R
=0.
IF=IR=30mA, R
L
=100Ω;
measured at I
R
=3mA.
Min.
--
--
--
350
--
--
--
Typ.
--
--
--
--
--
--
--
Max.
0.87
1.0
1.25
--
100
5.0
50
Unit
V
V
V
V
nA
pF
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2008.01.29
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