2SB065020MTJY
2SB065020MTJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
2SB065020MTJY is a schottky barrier diode chips
Lb
La
fabricated in silicon epitaxial planar technology;
Ø
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;
Guard ring construction for transient protection;
Low forward voltage drop;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Ø
Chip Size:650µm X 650µm;
Chip Thickness: 155±20um
Gross die:26000 Die/Wafer(5 inch)
Product Name
2SB065020MTJY
Chip Topography and Dimensions
La: Chip Size: 650µm;
Lb: Pad Size: 580µm;
ORDERING SPECIFICATIONS
Specification
For Au and AlSi wire bonding
package
Ø
Ø
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
20
0.5
5.5
125
-40~125
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
BR
V
F1
V
F2
I
R1
I
R2
Test Conditions
I
R
=250
µA
I
F
=100mA
I
F
=500mA
V
R
=10V
V
R
=20V
Min.
20
--
--
--
Max.
--
0.30
0.385
75
250
Unit
V
V
V
µA
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.10.24
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