2SB075040AMLJL
2SB075040AMLJL SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
2SB075040AMLJL is a schottky barrier diode
Lb
technology;
Ø
Low power losses, high efficiency;
Ø
Guard ring construction for transient protection;
Ø
High ESD capability;
Ø
High surge capability;
Ø
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
Ø
Chip Size:750µm X 750µm;
Chip Topography and Dimensions
La: Chip Size: 750µm;
Lb: Pad Size: 655µm;
Ø
Chip Thickness: 210±20µm;
ORDERING SPECIFICATIONS
Product Name
2SB075040AMLJL
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
40
1
30
125
-40~125
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
BR
V
F
I
R
Test Conditions
I
R
=100
µA
I
F
=1A
V
R
=40V
Min.
40
--
--
Max.
--
0.51
30
Unit
V
V
La
chips fabricated in silicon epitaxial planar
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.04.01
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