2SB183060MA
2SB183060MA LOW I
R
SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
Ø
2SB183060MA is a schottky barrier diode chips
Lb
Due to special schottky barrier structure, the
chips
have very low reverse leakage current ( typical
I
R
=0.002mA@ Vr=100V ) and maximum 150°C
operation junction temperature;
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Ø
Chip Size: 1830µm X 1830µm;
Chip Thickness: 280±20µm;
Product Name
2SB183060MAYY
Specification
For Axial leads package
Chip Topography and Dimensions
La: Chip Size: 1830µm;
Lb: Pad Size: 1730µm;
ORDERING SPECIFICATIONS
Ø
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
60
5
150
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
BR
V
F
I
R
Test Conditions
I
R
=0.5mA
I
F
=5A
V
R
=60V
Min.
60
--
--
Max.
--
0.70
0.5
Unit
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.04.27
Page 1 of 1
La
fabricated in silicon epitaxial planar technology;
SILAN [ SILAN MICROELECTRONICS JOINT-STOCK ]
