2SB267100MA
2SB267100MA LOW I
R
SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
Ø
2SB267100MA is a schottky barrier diode chips
Lb
Due to special schottky barrier structure, the
chips
have very low reverse leakage current ( typical
I
R
=0.002mA@Vr=100V ) and maximum 150°C
operation junction temperature;
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Ø
Chip Size: 2670µm X 2670µm;
Chip Thickness: 280±20µm;
Have two top side electrode materials for customer
to choose, detail refer to ordering specifications.
2SB267100MAYL
Product Name
2SB267100MAYY
Specification
For Axial leads package
For Au and AlSi wire bonding
package
Chip Topography and Dimensions
La: Chip Size: 2670µm;
Lb: Pad Size: 2470µm;
ORDERING SPECIFICATIONS
Ø
Ø
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
100
10
150
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
BR
V
F
I
R
Test Conditions
I
R
=0.5mA
I
F
=10A
V
R
=100V
Min.
100
--
--
Max.
--
0.85
0.5
Unit
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.04.27
Page 1 of 1
La
fabricated in silicon epitaxial planar technology;
SILAN [ SILAN MICROELECTRONICS JOINT-STOCK ]
