2SF292200HYY
2SF292200HYY FAST RECOVERY DIODE CHIPS
DESCRIPTION
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Ø
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2SF292200HYY is a fast recovery diode chips
fabricated in silicon epitaxial planar technology;
Fast recovery times;
High current capability;
High surge current capability;
Low forward voltage drop;
Low reverse current leakage;
Top metal is Ag, Back metal is Ag;
Chip Size: 2920µm X 2920µm;
Chip Thickness: 280±20µm;
Chip Topography and Dimensions
La: Chip Size:2920
µm;
Lb: Pad Size: 2840
µm;
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ORDERING SPECIFICATIONS
Product Name
2SF292200HYY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward RectifiedCurrent@Tc=150°C
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
200
20
390
175
-55~175
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Reverse recovery time
Symbol
V
BR
V
F1
V
F2
I
R
Trr
)
Test Conditions
Min.
200
--
--
--
--
Max.
--
0.84
0.96
25
200
Unit
V
V
V
A
I
R
=50
A
I
F
=5A
I
F
=20A
V
R
=200V
I
F
=0.5A,I
R
=1A;Irr=0.25A
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.06.06
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