3PT068080JL
3PT068080JL PHOTO TRANSISTOR CHIPS
DESCRIPTION
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3PT068080JL is NPN phototransistor chips that
fabricated in silicon epitaxial planar technology;
The chips are widely used in photo-coupler for
switching power suppliers;
It has low dark current, high sensitivity, high
responsible time etc;
The top side electrode material is Al, and the
backside electrode material is Au;
Chip Size: 680µm×450µm;
Chip Thickness: 220±20µm;
Emitter PAD Size(E): 130µm×105µm;
Base PAD Size(B): 40µm
×
40µm (only for chip
probing).
E: Emitter B: Base
Chip Topography
ABOSULATE MAXIMUM RATINGS
Parameters
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
T
J
T
STG
Ratings
125
-40~125
Unit
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Characteristics
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector Dark Current
Collector Emitter Saturation
Voltage
Rise/ Fall Time
Current Gain
Collector-Base Capacitance
Symbol
B
VCEO
Test conditions
I
C
=100µA, I
B
=0µA
Min.
80
Max.
Unit
V
B
VECO
I
C
=10µA, I
B
=0µA
V
CE
=20V, H=0mW/cm
2
V
CE
=80V, H=0mW/cm
2
7
50
150
0.2
2
10
700
7.4
V
nA
nA
V
V
µs
I
CEO
V
CE(SAT)
T
r
/T
f
h
FE
C
CB
I
C
=2mA, I
B
=100µA
I
C
=20mA, I
B
=100µA
V
CE
=2V, I
C
=2mA, R
L
=100
Ω
V
CE
=5V, I
C
=2mA
f=1MHz, V
CB
=3V
pF
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.07.02
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