3VD045060JL
3VD045060JL N-channel MOSFET CHIPS
DESCRIPTION
Ø
3VD045060JL is a N-Channel enhancement mode
MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
Ø
Ø
Ø
Ø
Ø
Ø
High density cell design for low R
DS
(ON)
Rugged and reliable.
Fast switching performance.
High saturation current capability.
The chips may be packaged in SOT-23 type and the
typical equivalent product is 2N7002.
The packaged product is widely used in the small
servo motor control, power MOS-FET gate drivers,
and other switching applications.
Ø
Die size: 0.53mm*0.53mm.
Ø
Ø
Chip Thickness: 230±20µm.
Top metal : Al, Backside Metal : Au.
PAD1: GATE
PAD2: SOURCE
1
2
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (SOT-23)
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
T
J
Tstg
Ratings
60
±20
115
200
150
-55-150
Unit
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage*
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current*
Drain-Source On-Resistance*
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
I
DSS
I
D(ON)
R
DS(on)
Test conditions
V
GS
=0V, I
D
=10µA
V
GS
=0V, I
D
=3mA
V
DS
= V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=60V, V
GS
=0V
V
GS
=10V, V
DS
=7V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
V
DS
=10V, I
D
=200mA
I
S
=115mA, V
GS
=0V
80
1.2
500
1.2
1.7
7.5
7.5
3.75
0.375
V
ms
V
Min
60
60
1
2.5
±100
1
nA
µA
mA
V
Typ
Max
Unit
Drain-Source On- Voltage *
Forward Transconductance*
Diode Forward Voltage
V
DS(on
)
g
ts
V
SDF
Note:* Pulse test, pulse width 300µS, duty cycle 2%
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.07.02
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