3VD156600YL
3VD156600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
3VD156600YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage-blocking capability.
Avalanche Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
The chips may packaged in TO-92DT-3L type and the
typical equivalent product is 1N60SS.
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
Die size: 1.6mm*1.54mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal : Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS
(T
amb
=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
T
J
T
stg
Ratings
600
±30
500
150
-55-150
Uni
t
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
I
DSS
R
DS(on)
V
FSD
Test conditions
V
GS
= 0V, I
D
=250μA
I
D
=250μA ,V
DS
=V
GS
V
GS
=±30V, V
DS
=0V
V
DS
=600V, V
GS
=0V
I
D
=0.5A, V
GS
=10V
I
D
=0.8A,V
GS
=0V
Min.
600
2.0
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Typ.
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Max.
----
4.0
±100
1.0
13.5
1.0
Unit
V
V
nA
µA
Ω
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
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