SA482X67K65
ELECTRICAL CHARACTERISTICS
(sense MOSFET part, unless otherwise specified, T
amb
=25°C)
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain Charge
Symbol
BV
DSS
I
DSS
Test conditions
V
GS
=0V, I
D
=50µA
V
DS
=Max. V
GS
=0V
V
DS
=0.8Max. V
GS
=0V
Tamb=125°C
R
DS(ON)
G
fs
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
Q
g
Q
gs
Q
gd
V
GS
=10V, I
D
=1A,
V
DD
=0.5BV
DSS
V
DD
=0.5BV
DSS
, I
D
=1A
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
Min.
650
--
--
--
1.5
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
5.0
--
550
38
17
20
15
55
25
--
3
12
Max.
--
50
200
6.0
--
--
--
--
--
--
--
--
35
--
--
nC
nS
pF
Unit
V
µA
µA
Ω
S
ELECTRICAL CHARACTERISTICS
(control part, unless otherwise specified, T
amb
=25°C)
Characteristics
Undervoltage Section
Start Threshold Voltage
Stop Threshold Voltage
Oscillator Section
Oscillate Frequency
Frequency Change With
Temperature
Maximum Duty
Feedback Section
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
Reference Voltage
Output Voltage
Temperature Stability
Current Limit
Peak Current Limit
I
over
Max. inductor current
1.89
2.15
2.41
A
V
ref
V
ref
T
-25°
T
amb
+85°C
4.80
--
5.00
0.3
5.20
0.6
V
mV/°C
I
FB
V
SD
I
delay
0V V
FB
3V
V
FB
6.5V
5V V
FB
V
SD
0.8
6.9
4
1.0
7.5
5
1.2
8.1
6
mA
V
µA
F
OSC
--
D
max
-25°
T
amb
+85°C
61
--
72
67
±5
77
73
±10
82
KHz
%
%
V
start
V
stop
V
FB
=0
V
FB
=0
14
8.4
15
9
16
9.6
V
V
Symbol
Test conditions
Min.
Typ.
Max.
Unit
To be continued
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.4
2007.07.05
Page 3 of 7
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