SVD8N60T/SVD8N60F
8A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗
8A,600V,R
DS(on) typ
=0.96Ω@V
GS
=10V
∗
Low gate charge
∗
Low Crss
∗
Fast switching
∗
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD8N60T
SVD8N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVD8N60T
SVD8N60F
Shipping
50Unit/Tube
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS
(T
c
=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
E
AR
T
J
Tstg
-55
-55
147
1.18
530
14.2
+150
+150
SVD8N60T
600
±30
8.0
28
48
0.38
SVD8N60F
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2009.07.09
Page 1 of 7
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