SVD8N60T/SVD8N60F
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
JC
R
JA
SVD8N60T
0.85
62.5
SVD8N60F
2.6
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 2,3)
V
DS
=480V,I
D
=7.0A,
V
GS
=10V
(Note 2,3)
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10V, I
D
=3.5A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
V
DD
=300V,I
D
=7.0A,
R
G
=25Ω
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.96
1095
93
2
39
29
248
36
26.8
5.1
8.5
--
--
--
--
ns
--
--
--
--
--
nC
pF
Max.
--
10
±100
4.0
1.2
Unit
V
µA
nA
V
Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
L=19.5mH,I
AS
=7.0A,V
DD
=50V,R
G
=25Ω,starting T
J
=25°C;
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral
Junction
MOSFET
I
S
=8.0A,V
GS
=0V
I
S
=8.0A,V
GS
=0V,
dI
F
/dt=100A/µS
Reverse
Diode
in
P-N
the
Min.
--
--
--
--
--
Typ.
--
--
--
365
3.4
Max.
8.0
28
1.4
--
--
A
V
ns
µC
Unit
2.
Pulse Test: Pulse width 300 s,Duty cycle 2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2009.07.09
Page 2 of 7
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