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SSBR10100CTF 参数 Datasheet PDF下载

SSBR10100CTF图片预览
型号: SSBR10100CTF
PDF下载: 下载PDF文件 查看货源
内容描述: 高结温 [High Junction Temperature]
分类和应用:
文件页数/大小: 2 页 / 191 K
品牌: SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
 浏览型号SSBR10100CTF的Datasheet PDF文件第2页  
                                                                
SSBR10100CT
 
SSBR10100CTF
Main Product Characteristics:
IF
VRRM
T
j
(max)
Vf(max)
2×5A
100V
150C
0.8V
Features and Benefits:
High Junction Temperature
High ESD Protection, IEC Model
±10Kv
High Forward & Reverse Surge capability
  
TO220 
SSBR10100CT 
TO220F 
SSBR10100CTF 
 
Description:
Schottky Barrier Rectifier designed for high frequency
switch model power supplies such as adaptors and
DC/DC convertors; this product special design for high
forward and reverse surge capability
Absolute Rating:
Symbol
V
RRM
V
R(RMS)
I
F(AV)
I
FSM
I
RRM
T
J
T
stg
Symbol
R
θJC
R
θJC
Symbol
V
R
V
F
I
R
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
Characterizes
Peak Repetitive Reverse Voltage
Value
100
70
5
10
120
1
-50~150
-50~150
Value
TO220
TO220F
Max
0.8
0.75
0.1
5
Unit
V
V
mA
2
4
Unit
V
V
A
A
A
A
Unit
℃/W
℃/W
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
Peak Repetitive Reverse Surge Current(Tp=2us)
Maximum operation Junction Temperature Range
Storage Temperature Range
Characterizes
Maximum Thermal Resistance Junction To
Case
Characterizes
Reverse Breakdown Voltage
Forward Voltage Drop
Leakage Current
Min
100
Typ
Thermal Resistance
Electrical Characterizes
@T
A
=25℃ unless otherwise specified
Test Condition
I
R
=0.5mA
I
F
=5A, T
J
=25℃
I
F
=5A, T
J
=125℃
V
R
=100V, T
J
=25℃
V
R
=100V, T
J
=125℃
©
Silikron Semiconductor CO.,LTD.
 
2009.5.15
www.silikron.com 
Version : 1.0
page
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