SSBR20100CT
SSBR20100CTF
Main Product Characteristics:
IF
VRRM
T
j
(max)
Vf(max)
2×10A
100V
150C
0.8V
Features and Benefits:
High Junction Temperature
High ESD Protection, IEC Model
±10Kv
High Forward & Reverse Surge capability
TO220
SSBR20100CT
TO220F
SSBR20100CTF
Description:
Schottky Barrier Rectifier designed for high frequency
switch model power supplies such as adaptors and
DC/DC convertors; this product special design for high
forward and reverse surge capability
Absolute Rating:
Symbol
V
RRM
V
R(RMS)
I
F(AV)
I
FSM
I
RRM
T
J
T
stg
Symbol
R
θJC
R
θJC
Symbol
V
R
V
F
I
R
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
Characterizes
Peak Repetitive Reverse Voltage
Value
100
70
10
20
180
0.5
-50~150
-50~150
Value
TO220
TO220F
Max
0.8
0.75
0.1
5
Unit
V
V
mA
2
4
Unit
V
V
A
A
A
A
℃
℃
Unit
℃/W
℃/W
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
Peak Repetitive Reverse Surge Current(Tp=2us)
Maximum operation Junction Temperature Range
Storage Temperature Range
Characterizes
Maximum Thermal Resistance Junction To
Case
Characterizes
Reverse Breakdown Voltage
Forward Voltage Drop
Leakage Current
Min
100
Typ
Thermal Resistance
Electrical Characterizes
@T
A
=25℃ unless otherwise specified
Test Condition
I
R
=0.5mA
I
F
=10A, T
J
=25℃
I
F
=10A, T
J
=125℃
V
R
=100V, T
J
=25℃
V
R
=100V, T
J
=125℃
©
Silikron Semiconductor CO.,LTD.
2009.5.15
www.silikron.com
Version : 1.0
page
1of3
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
