SSF0115
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF0115 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF0115 is assembled
in high reliability and qualified assembly house.
Application:
IEEE802.3AF Compatible
SSF0115 TOP View (SOT-223)
ID =3A
BV=100V
Rdson=0.15Ω
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25
ْ
C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
dv/dt
T
J
T
STG
Thermal Resistance
Parameter
R
θJA
Junction-to-ambient
Min.
—
Typ.
—
Max.
69
Units
C/W
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Peak diode recovery voltage
Operating Junction and
Storage Temperature Range
–55 to +150
Max.
3
2.3
12
1.8
0.019
±20
79
TBD
W
W/
ْ
C
V
mJ
mJ
v/ns
ْ
C
A
Units
*When mounted on the minimum pas size recommended（PCB Mount）.
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Parameter
BV
DSS
V
GS(th)
I
DSS
Drain-to-Source breakdown voltage
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
R
DS(on)
Static Drain-to-Source on-resistance
Min.
100
—
2.0
—
—
—
—
2009.6.10
Typ.
—
0.09
—
—
—
—
—
Max. Units
—
0.15
4.0
1
10
100
-100
μA
V
Ω
V
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=2A
V
DS
=V
GS
,I
D
=250μA
V
DS
=30V,V
GS
=0V
V
DS
=100V,
V
GS
=0V,T
J
=150ْC
V
GS
=20V
V
GS
=-20V
Version : 1.0
page
1of5
I
GSS
nA
©
Silikron Semiconductor CO.,LTD.
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