SSF2301
DESCRIPTION
The SSF2301 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
D
G
GENERAL FEATURES
●
V
DS
= -20V,I
D
= -3A
R
DS(ON)
< 115mΩ @ V
GS
=-2.5V
R
DS(ON)
< 90mΩ @ V
GS
=-4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
S
Schematic diagram
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2301
SSF2301
SOT23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
-20
±12
-3
-10
1.25
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
100
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
Min
-20
Typ
Max
Unit
V
-1
±100
μA
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
