SSF2312
DESCRIPTION
The SSF2312 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
D
S
Schematic diagram
GENERAL FEATURES
●
V
DS
= 20V,I
D
= 4.5A
R
DS(ON)
< 40mΩ @ V
GS
=2.5V
R
DS(ON)
< 33mΩ @ V
GS
=4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
3
D
2312
G 1
2 S
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
SOT-23
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
2312
Device
SSF2312
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
20
±8
4.5
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
100
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
Min
20
Typ
Max
Unit
V
1
±100
μA
nA
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1
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