SSF3055
DESCRIPTION
The SSF3055 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a Battery protection or in
other Switching application.
G
D
S
GENERAL FEATURES
●
V
DS
= 25V,I
D
= 12A
R
DS(ON)
< 120mΩ @ V
GS
=5V
R
DS(ON)
< 90mΩ @ V
GS
=10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
3
2
1
S
D
G
Application
●Battery
protection
●Load
switch
●Power
management
Marking and pin Assignment
TO-252(DPAK) top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
3055
Device
SSF3055
Device Package
To-252(DPAK)
Reel Size
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
25
±20
12
45
48
-55 To 150
Unit
V
V
A
A
W
℃
75
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS(th)
R
DS(ON)
V
DS
=V
GS
,I
D
=250µA
V
GS
=5V, I
D
=12A
V
GS
=10V, I
D
=12A
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250µA
V
DS
=20V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
Min
25
Typ
Max
Unit
V
25
±250
0.8
1.2
70
50
2.5
120
90
µA
nA
V
mΩ
mΩ
©
Silikron Semiconductor CO.,LTD.
2008.7.29
Version : 1.0
page 1 of 3
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
