SSF3117
DESCRIPTION
The SSF3117 uses advanced trench technology
to provide excellent R
DS(ON)
and low gate charge .
A Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
●
MOSFET
V
DS
= -20V,I
D
= -3.3A
R
DS(ON)
< 180mΩ @ V
GS
=-1.8V
R
DS(ON)
< 120mΩ @ V
GS
=-2.5V
R
DS(ON)
< 90mΩ @ V
GS
=-4.5V
●
SCHOTTKY
V
R
= 30V, I
F
= 2A, V
F
<0.53V @ 1.0A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●DC-DC
conversion applications
●Load
switch
●Power
management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
3117
Device
SSF3117
Device Package
DFN2X2-6L
Reel Size
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Schottky reverse voltage
Continuous Forward Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
V
R
I
F
P
D
T
J
,T
STG
1.5
-55 To 150
-55 To 150
MOSFET
-20
±8
-3.3
-20
30
2
Schottky
Unit
V
V
A
A
V
A
W
℃
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
R
θJA
54
℃
/W
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.1
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