SSF3344
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
V
GS
=2.5V, I
D
=2A
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=3A
V
GS
=10V, I
D
=4A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=1A
1
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V,I
D
=4A,V
GS
=4.5V
V
DS
=15V,I
D
=4A
V
GS
=10V,R
GEN
=3.3Ω
R
D
=3Ω
6
20
20
3
8.5
1.5
3.2
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
500
80
50
PF
PF
PF
g
FS
V
DS
=5V,I
D
=4A
0.6
83
55
45
8
1.4
110
70
55
V
mΩ
mΩ
mΩ
S
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
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