SSF5508
Feathers:
Advanced trench process technology
Ultra low Rdson, typical 6mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF5508 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF5508 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF5508 TOP View (TO220)
ID =110A
BV=55V
Rdson=4.5
mΩ(typ.)
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25
ْ
C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
dv/dt
E
AS
E
AR
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
2009.12.26
Max.
110
80
400
170
2.0
±20
31
480
TBD
–55 to +150
Units
A
W
W/
ْ
C
V
v/ns
mJ
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Peak diode recovery voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Min.
—
—
Min.
55
—
2.0
-
—
—
—
58
—
—
—
Typ.
—
4.5
ْ
C
Typ.
0.73
—
Max.
—
62
Units
ْ
C/W
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Max. Units
—
8
4.0
—
2
10
100
μA
nA
V
mΩ
V
S
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=68A
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=30A
V
DS
=55V,V
GS
=0V
V
DS
=55V,
V
GS
=0V,T
J
=150ْC
V
GS
=20V
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Silikron Semiconductor CO.,LTD.
Version : 1.0
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