SSF6008
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF6008 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6008 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF6008TOP View (T0-220)
ID =84A
BV=60V
Rdson=8mΩ
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25
ْ
C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
dv/dt
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْ
C/W
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy
②
Repetitive avalanche energy①
Peak diode recovery voltage
Operating Junction and
Storage Temperature Range
Max.
84
76
310
150
1.5
±20
400
20
30
–55 to +150
W
W/
ْ
C
V
mJ
mJ
v/ns
ْ
C
A
Units
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Parameter
BV
DSS
V
GS(th)
I
DSS
Drain-to-Source breakdown voltage
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
R
DS(on)
Static Drain-to-Source on-resistance
Min.
60
—
2.0
—
—
—
—
2009.7.10
Typ.
—
5.5
—
—
—
—
—
Max. Units
—
8
4.0
2
10
100
-100
V
V
Test Conditions
V
GS
=0V,I
D
=250μA
V
DS
=V
GS
,I
D
=250μA
V
DS
=60V,V
GS
=0V
mΩ V
GS
=10V,I
D
=30A
μA
V
DS
=60V,
V
GS
=0V,T
J
=150ْC
nA
V
GS
=20V
V
GS
=-20V
Version : 1.0
page
1of5
I
GSS
©
Silikron Semiconductor CO.,LTD.
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