SSF6010
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF6010 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6010 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF6010 TOP View (TO220)
ID =60A
BV=60V
Rdson=10mohm
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25
ْ
C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Parameter
BV
DSS
V
GS(th)
g
fs
I
DSS
Drain-to-Source breakdown voltage
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
R
DS(on)
Static Drain-to-Source on-resistance
Min.
60
—
2.0
-
—
—
—
—
58
—
—
—
—
Min.
—
—
Typ.
—
9
Typ.
1.25
—
Max. Units
—
10
4.0
—
2
10
100
-100
μA
V
GS
=20V
V
GS
=-20V
V
mΩ
V
S
Max.
—
62
Units
ْ
C/W
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
60
45
240
100
0.74
±20
220
TBD
–55 to +150
ْ
C
W
W/
ْ
C
V
mJ
A
Units
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=30A
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=30A
V
DS
=60V,V
GS
=0V
V
DS
=60V,
V
GS
=0V,T
J
=150ْC
nA
I
GSS
©
Silikron Semiconductor CO.,LTD.
2009.12.15
Version : 1.0
page
1of5
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
