SSF7509
Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Description:
The SSF7509 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.2mohm.
Application:
Power switching application
SSF7509 TOP View (TO220)
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25
ْ
C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
dv/dt
E
AS
E
AR
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
2008.8.1
ID=80A
BV=80V
Rdson=8mohm
Max.
80
72
320
165
2.0
±20
31
500
TBD
–55 to +150
Units
A
W
W/
ْ
C
V
v/ns
mJ
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Peak diode recovery voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
ْ
C
Min.
—
—
Min.
80
—
2.0
-
—
—
—
58
—
—
—
Typ.
—
Typ.
0.75
—
Max.
—
62
Units
ْ
C/W
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Max. Units
—
4.0
—
2
10
100
μA
nA
V
Ω
V
S
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=40A
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=30A
V
DS
=80V,V
GS
=0V
V
DS
=80V,
V
GS
=0V,T
J
=150ْC
V
GS
=20V
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Silikron Semiconductor CO.,LTD.
Version : 1.0
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