SSF8205A
DESCRIPTION
The SSF8205A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G1
D1
D2
G2
S1
S2
GENERAL FEATURES
●
V
DS
= 20V,I
D
= 6A
R
DS(ON)
< 37.5mΩ @ V
GS
=2.5V
R
DS(ON)
< 27.5mΩ @ V
GS
=4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
4 3 2 1
5 6 7 8
D1
S1
S1
G1
D2
S2
S2
8205A
G2
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
8205A
Device
SSF8205A
Device Package
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
83
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS(th)
R
DS(ON)
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=4.5A
V
GS
=2.5V, I
D
=3.5A
©Silikron Semiconductor CO.,LTD.
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=18V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
Min
20
Typ
Max
Unit
V
1
±100
0.5
0.65
21
30
1.2
27.5
37.5
μA
nA
V
mΩ
mΩ
v1.1
1
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