SSF9926
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=1.7A
1
1.2
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=3A,V
GS
=4.5V
V
DS
=10V,V
GS
=4.5V,R
GEN
=6Ω
I
D
=1A
9.6
6.5
28
6
6
1.5
1.5
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=8V,V
GS
=0V,
F=1.0MHz
550
140
120
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
DS
=5V,I
D
=4.5A
0.6
0.75
22.5
32
18
1
28
44
V
mΩ
mΩ
S
I
GSS
V
GS
=±10V,V
DS
=0V
±100
nA
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on 1in
2
FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
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