STS-8857
Transmissive Switch Assembly
Features
•
Non contact switching
•
Three wires for electrical connection
•
Fast switching speed
Description
The STS-8857 consists of an infrared emitting diode
and an NPN silicon phototransistor mounted on
opposite sides of a 3.8 mm wide slot. Phototransistor
switching takes place whenever an opaque object
passes through the slot. The polysulfone housing (2)
reduces interference from ambient light and provides
dirt and dust protection. The 40 cm minimum length
wires simplify the connection to the PC board.
Absolute Maximum Ratings
Operating & Storage Temperature
Input Diode
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1µs pulse)
Power Dissipation (1)
Phototransistor
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation (1)
-40°C to +85°C
3V
50 mA
3A
100 mW
30 V
5V
100 mW
7.6
3.8
14.5
6.3
Dimensions in mm. (-/+ 0.12)
15.5
3.8
3.4
Optical center-line
9.0
18.3
11.7
18.3
Wires are omitted
for clarity
Wire
3.3
Brown
Red
Black
Schematic
Notes:
(1) Derate linearly 1.33 mW/°C above 25°C.
(2) Plastic housing is soluble in chlorinated
hydrocarbons and ketones. Recommended
cleaning agents are methanol or isopropanol.
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Symbol
Parameter
Min Typ Max
Input Diode
V
F
Forward Voltage
1.2 1.7
I
R
Reverse Current
10
Output Phototransistor
I
CEO
Collector Dark Current
100
BV
CEO
Collector-Emitter Breakdown Voltage 30
BV
ECO
Emitter-Collector Breakdown Voltage
5
Coupled
V
CE(SAT)
Collector Emitter Saturation Voltage
0.4
I
C(ON)
On-State Collector Current
1.5
Specifications subject to change without notice
Units
V
µA
nA
V
V
V
mA
Test Conditions
I
F
= 20 mA
V
R
= 3 V
V
CE
=10V, Ee=0
I
C
=100µA, Ee=0
I
C
=100µA, Ee=0
I
C
=100µA, I
F
= 20 mA
V
CE
=10V, I
F
= 20 mA
103057 REV 1
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: 514-768-8000
Fax: 514-768-8889
QF-84
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 01 229 581 551
Fax: 01 229 581 554
SILONEX [ SILONEX INC. ]
