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U635H64 参数 Datasheet PDF下载

U635H64图片预览
型号: U635H64
PDF下载: 下载PDF文件 查看货源
内容描述: PowerStore 8K ×8的nvSRAM [PowerStore 8K x 8 nvSRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 139 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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U635H64
Block Diagram
EEPROM Array
128 x (64 x 8)
A5
Row Decoder
A6
A7
A8
A9
A11
A12
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
E
W
Input Buffers
SRAM
Array
128 Rows x
64 x 8 Columns
Store/
Recall
Control
V
CC
V
SS
STORE
RECALL
Power
Control
V
CC
Column I/O
Column Decoder
Software
Detect
A0 - A12
A0 A1 A2 A3 A4 A10
G
Truth Table for SRAM Operations
Operating Mode
Standby/not selected
Internal Read
Read
Write
*
H or L
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured
±
200 mV from steady-state voltage.
E
H
L
L
L
W
*
G
*
DQ0 - DQ7
High-Z
High-Z
Data Outputs Low-Z
Data Inputs High-Z
H
H
L
H
L
*
Absolute Maximum Ratings
a
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
a:
Symbol
V
CC
V
I
V
O
P
D
Min.
-0.5
-0.3
-0.3
Max.
7
V
CC
+0.5
V
CC
+0.5
1
Unit
V
V
V
W
°C
°C
°C
C-Type
K-Type
T
a
T
stg
0
-40
-65
70
85
150
Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
STK Control #ML0052
2
Rev 1.0
March 31, 2006