E
L
E
C
T
R
O
N
I
C
2N7002PT
- 0.25Amp 60Volt
N-Channel Enhancement Mode Field Effect Transistor
□
Application
-Servomotor control
-Power MOSFET gate drivers
-Other switching applications
SOT-23
.040(1.02)
.035(0.88)
.055(1.40)
.047(0.85)
.103(2.64)
.086(2.20)
.007(0.177)
.002(0.050)
.019(0.50)
.018(0.30)
□
Feature
-Small surface mounting type
-High density cell design for low R
DS(ON)
-Suitable for high packing density
-Rugged and reliable
-High saturation current capability
-Voltage controlled small signal switch
.119(3.04)
.110(2.80)
□
Construction
-N-Channel Enhancement
.028(0.70)
.020(0.50)
□
Circuit
D
.045(1.15)
.033(0.85)
G
S
□
Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (R
GS
≦1MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp<50μs)
Maximum Drain Current - Continuos
- Pulsed
Maximum Power Dissipation
T
A
= 25ºC
T
A
= 70ºC
T
A
= 25ºC
T
A
= 70ºC
SYMBOL
V
DSS
V
DGR
V
GSS
2N7002PT
60
60
±
20
±
40
250
190
350
220
-55 to +150
300
357
UNIT
V
V
V
.082(2.10)
.066(1.70)
I
D
mA
P
D
T
J ,
T
STG
T
L
R
θJA
mW
mW
ºC
ºC/W
September 2006 / Rev.3
Operting and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16” from
Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
SIRECT [ Sirectifier Global Corp. ]
