E
L
E
C
T
R
O
N
I
C
RTM2302
20V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 3.6A = 65mΩ
R
DS (on)
, Vgs @ 2.5V, Ids @ 3.1A = 95mΩ
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
RTM2302CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating
(Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
Ta = 25
o
C
o
Ta = 75 C
Limit
20V
±8
2.4
10
1.25
0.8
Unit
V
V
A
A
W
P
D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
J
, T
STG
+150
- 55 to +150
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
T
L
R
θja
Limit
5
100
Unit
S
o
C/W
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