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SDT100GK16 参数 Datasheet PDF下载

SDT100GK16图片预览
型号: SDT100GK16
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管,二极管模块,二极管,晶闸管模块 [Thyristor-Diode Modules, Diode-Thyristor Modules]
分类和应用: 二极管
文件页数/大小: 4 页 / 921 K
品牌: SIRECT [ Sirectifier Global Corp. ]
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STD/SDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
V
RSM
V
DSM
V
STD/SDT100GK08
900
STD/SDT100GK12
1300
STD/SDT100GK14
1500
STD/SDT100GK16
1700
STD/SDT100GK18
1900
STD/SDT100GK20
2100
STD/SDT100GK22
2300
V
RRM
V
DRM
V
800
1200
1400
1600
1800
2000
2200
Dimensions in mm (1mm=0.0394")
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=0.45A
di
G
/dt=0.45A/us
Test Conditions
Maximum Ratings
180
100
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=250A
1700
1800
1540
1640
14450
13500
11850
11300
150
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=I
TAVM
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=300us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2.5-4.0/22-35
2.5-4.0/22-35
90
V~
Nm/lb.in.
g
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws