SG15N12P, SG15N12DP
Discrete IGBTs
Dimensions TO-220AB
E
C
G
G=Gate, C=Collector, E=Emitter
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
SG15N12P
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
SG15N12DP
Test Conditions
Maximum Ratings
1200
1200
±20
±30
30
15
60
I
CM
=40
@ 0.8 V
CES
150
-55...+150
150
-55...+150
Unit
V
V
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=10
(RBSOA)
Clamped inductive load
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
M
d
Weight
Mounting torque with screw M3
Mounting torque with screw M3.5
C
300
0.45/4
0.55/5
4
o
C
Nm/Ib.in.
g
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=V
CES
;
V
GE
=0V;
T
J
=25
o
C
T
J
=125
o
C
Characteristic Values
min.
600
2.5
5.0
100
3.5
±100
3.2
typ.
max.
V
V
uA
mA
nA
V
Unit
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SIRECT [ Sirectifier Global Corp. ]
