SG20N12T, SG20N12DT
Discrete IGBTs
Dimensions TO-247AD
Dim.
A
B
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
C(TAB)
E
C
G
G=Gate, C=Collector,
E=Emitter,TAB=Collector
C
D
E
F
G
H
J
K
L
M
N
SG20N12T
SG20N12DT
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
Test Conditions
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
Maximum Ratings
1200
1200
±20
±30
40
20
80
I
CM
=40
@ 0.8 V
CES
150
-55...+150
150
-55...+150
Unit
V
V
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=47
(RBSOA)
Clamped inductive load
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Maximum Tab temperature for soldering SMD devices for 10s
M
d
Weight
Mounting torque (M3)
C
300
260
1.13/10
6
o
C
C
o
Nm/Ib.in.
g
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
=1mA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=V
CES
;
V
GE
=0V;
T
J
=25
o
C
T
J
=125
o
C
2.0
Test Conditions
Characteristic Values
min.
1200
2.5
5.0
250
1
±100
2.5
typ.
max.
V
V
uA
mA
nA
V
Unit
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SIRECT [ Sirectifier Global Corp. ]
