SG50N06D2S, SG50N06D3S
Discrete IGBTs
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
SG50N06D2S
SG50N06D3S
V
W
Symbol
Test Conditions
Maximum Ratings
600
600
±20
±30
75
50
200
I
CM
=100
@
0.8V
CES
250
600
60
600
150
300
-40…+150
150
-40…+150
1.5/13
1.5/13
30
Unit
V
V
A
A
W
V
A
A
W
o
C
V
CES
T
J
=25
o
C
to 150
o
C
V
CGR
T
J
=25
o
C
to 150
o
C;
R
GE
=1M
V
GES
Continuous
V
GEM
Transient
I
C25
T
C
=25
o
C
I
C90
T
C
=90
o
C
I
CM
T
C
=25
o
C;
1 ms
SSOA
V
GE
=15V; T
VJ
=125
o
C;
R
G
=10
(RBSOA)
Clamped inductive load; L=30uH
P
C
T
C
=25
o
C
V
RRM
I
FAVM
T
C
=70
o
C;
rectangular; d=50%
I
FRM
t
p
10ms; pulse width limited by T
J
P
D
T
C
=25
o
C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
J
T
JM
T
stg
M
d
Mounting torque
Terminal connection torque(M4)
Weight
CASE
DIODE
IGBT
A
Nm/Ib.in.
g
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=0.8V
CES
;
V
GE
=0V;
T
J
=25
o
C
T
J
=125
o
C
Characteristic Values
min.
typ.
max.
600
2.5
5.0
200
1
±100
2.5
Unit
V
V
uA
mA
nA
V
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SIRECT [ Sirectifier Global Corp. ]
