SG75S12S
Discrete IGBTs
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
SG75S12S
I
C
A
75
V
CE
V
1200
R
S
T
U
V
W
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
SwSOA
(T
vj
= 25°C, unless specified otherwise)
Conditions
V
GE
shorted
T
hs
= 70°C
Pulse: t
p
= 1ms, T
hs
= 70°C
Values
1200
75
150
Unit
V
A
A
V
W
_
+20
T
hs
= 25°C per switch
340
_
I
C
= 150A, V
CEM
= 1200V, V
CC
< 1000V,
_
V
GE
= +15V, T
vj
= 125°C
voltages measured on auxiliary terminals
V
CC
= 900V, V
CEM
= 1200V, t
p
= 10µs,
_
V
GE
= +15V, T
vj
= 125°C
75
Pulse: t
p
= 1ms, T
hs
= 70°C
150
A
A
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
SCSOA
I
F
I
FM
Maximum Rated Values (cont.)
Parameter
Junction Temperature
Storage Temperature
Isolation Voltage
Symbol
T
vj
T
tstg
/ T
cop
V
iso
(T
vj
= 25°C, unless specified otherwise)
Conditions
Values
-40 ~ 150
-40 ~ 125
1min, f = 50Hz
2500
Unit
°C
°C
V
SIRECT [ Sirectifier Global Corp. ]
