SG7N06P, SG7N06DP
Discrete IGBTs
Dimensions TO-220AB
E
C
G
G=Gate, C=Collector, E=Emitter
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
SG7N06P
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
SG7N06DP
Test Conditions
Maximum Ratings
600
600
±20
±30
14
7
30
I
CM
=14
@ 0.8 V
CES
54
-55...+150
150
-55...+150
Unit
V
V
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=22
(RBSOA)
Clamped inductive load, L=300uH
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
M
d
Weight
Mounting torque, (TO-220)
M3
M3.5
C
300
0.45/4
0.55/5
4
o
C
Nm/Ib.in.
g
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=0.8V
CES
;
V
GE
=0V;
T
J
=25
o
C
T
J
=125
o
C
1.5
Characteristic Values
min.
600
2.5
5.5
100
500
±100
1.8
typ.
max.
V
V
uA
nA
V
Unit
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SIRECT [ Sirectifier Global Corp. ]
