STD/SDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 2 i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: I
GT
, T
VJ
= 125
o
C
V
V
G
2: I
GT
, T
VJ
= 25
o
C
3: I
GT
, T
VJ
= -40
o
C
3
1
1
4
2
5
6
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125
o
C
0.1
10
0
10
1
10
2
5: P
GM
=
5W
6: P
GM
= 10 W
10
3
I
G
mA
10
4
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000
T
VJ
= 25
o
C
s
t
gd
typ.
100
Limit
10
3 x STD/SDT100
1
10
100
I
G
mA
1000
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
3 x STD/SDT100
Fig. 6 Gate trigger delay time
SIRECT [ Sirectifier Global Corp. ]
