STPR810D thru STPR820D
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A=Anode, C=Cathode, TAB=Cathode
STPR810D
STPR820D
V
RRM
V
100
200
V
RMS
V
70
140
V
DC
V
100
200
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Symbol
I
(AV)
I
FSM
Characteristics
Maximum Average Forward Rectified Current
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
Maximum Forward Voltage
Pulse Width=300us
Duty Cycle
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
@T
C
=120
o
C
T
P
=10ms
T
P
=8.3ms
Maximum Ratings
8.0
80
90
0.99
1.20
1.25
50
600
80
30
3.0
-55 to +150
Unit
A
A
V
F
I
F
=8A @T
J
=125
o
C
I
F
=16A @T
J
=125
o
C
I
F
=16A @T
J
=25
o
C
@T
J
=25
o
C
@T
J
=100
o
C
V
I
R
C
J
T
RR
R
OJC
uA
pF
ns
o
C/W
o
T
J
, T
STG
Operating and Storage Temperature Range
NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECT [ Sirectifier Global Corp. ]
