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STPR830DF 参数 Datasheet PDF下载

STPR830DF图片预览
型号: STPR830DF
PDF下载: 下载PDF文件 查看货源
内容描述: 超快速恢复二极管 [Ultra Fast Recovery Diodes]
分类和应用: 二极管功效局域网超快速恢复二极管
文件页数/大小: 2 页 / 80 K
品牌: SIRECT [ Sirectifier Global Corp. ]
 浏览型号STPR830DF的Datasheet PDF文件第2页  
STPR830DF thru STPR840DF
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A=Anode, C=Cathode, TAB=Cathode
STPR830DF
STPR840DF
V
RRM
V
300
400
V
RMS
V
210
280
V
DC
V
300
400
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
T
RR
R
OJC
Characteristics
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Maximum Ratings
8.0
125
1.3
@T
J
=25
o
C
@T
J
=100
o
C
5
500
110
50
2.5
-55 to +150
Unit
A
A
V
uA
pF
ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any